Half integer quantum Hall effect in high mobility single layer epitaxial graphene

Abstract

The quantum Hall effect, with a Berry's phase of $\pi$ is demonstrated here on a single graphene layer grown on the C-face of 4H silicon carbide. The mobility is $\sim$ 20,000 cm${}^2$/V$\cdot$s at 4 K and ~15,000 cm${}^2$/V$\cdot$s at 300 K despite contamination and substrate steps. This is comparable to the best exfoliated graphene flakes on SiO${}_2$ and an order of magnitude larger than Si-face epitaxial graphene monolayers. These and other properties indicate that C-face epitaxial graphene is a viable platform for graphene-based electronics.

Some modifications in the text and figures, 7 pages, 2 figures

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