Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

Abstract

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.

arXiv comment18 pages, 8 figures

References in corpus (15)

• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Graphene films with large domain size by a two-step chemical vapor deposition process
• Epitaxial graphene
• Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
• Weak antilocalization in epitaxial graphene: evidence for chiral electrons
• Half integer quantum Hall effect in high mobility single layer epitaxial graphene
• Comparison of Graphene Formation on C-face and Si-face SiC {0001} Surfaces
• Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
• Step-edge instability during epitaxial growth of graphene from SiC(0001)
• Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC
• Early stage formation of graphene on the C-face of 6H-SiC
• Structured epitaxial graphene: growth and properties
• A model for the epitaxial growth of graphene on 6H-SiC

Cited by in corpus (4)

• Atomic resolution imaging of the two-component Dirac-Landau levels in a gapped graphene monolayer
• Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC
• Wafer bonding solution to epitaxial graphene - silicon integration
• Formation of Graphene atop a Si adlayer on the C-face of SiC