Epitaxial graphene

Abstract

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties which may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material.Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nanoelectronics.

19 pages, 11 figures, submitted to Solid State Communications.

References in corpus (2)

• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Magnetic oscillations in planar systems with the Dirac-like spectrum of quasiparticle excitations II: transport properties

Cited by in corpus (8)

• Origins of anomalous electronic structures of epitaxial graphene on silicon carbide
• The epitaxial-graphene/graphene-oxide junction, an essential step towards epitaxial graphene electronics
• Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
• The Role of Electron-electron Interactions in Graphene ARPES Spectra
• Few layers graphene on 6H-SiC(000-1): an STM study
• Supercritical Coulomb Impurities in Gapped Graphene
• Eigenvalue inequalities for Klein-Gordon Operators
• Graphene nanodevices: bridging nanoelectronics and subwavelength optics