Selective epitaxial growth of graphene on SiC

Abstract

We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ~1582 cm-1 in the AlN-free areas is used to validate the concept, it gives absolute evidence of the selective FLG growth.

comments: 3 pages, reference 3 replaced

References in corpus (9)

• Electric Field Effect in Atomically Thin Carbon Films
• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
• Epitaxial graphene
• Current-induced cleaning of graphene
• Raman spectroscopy of epitaxial graphene on a SiC substrate
• Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
• The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction

Cited by in corpus (5)

• A First-Principles Study of Defects and Adatoms in Silicon Carbide Honeycomb Structures
• Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
• CO2 Laser-Induced Growth of Epitaxial Graphene on 6H-SiC(0001)
• Early stage formation of graphene on the C-face of 6H-SiC
• Epitaxial electrical contact to graphene on SiC