101 citations · 195 across the 6 of their papers we have counts for
6 papers
InSe as a case between 3D and 2D layered crystals for excitons
W. Desrat, T. V. Shubina, M. Moret +3
We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium…
Josephson coupling in junctions made of monolayer graphene on SiC
B. Jouault, S. Charpentier, D. Massarotti +10
Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has bee…
Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC
A. Tiberj, J. R. Huntzinger, N. Camara +2
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to…
Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
N. Camara, G. Rius, J-R. Huntzinger +5
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modi…
Early stage formation of graphene on the C-face of 6H-SiC
N. Camara, G. Rius, J. -R. Huntzinger +5
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is…
Selective epitaxial growth of graphene on SiC
N. Camara, G. Rius, J. -R. Huntzinger +4
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a…