Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)

Abstract

We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modify the desorption of the Si species during the Si sublimation process. This results in a better control of the growth kinetics, yielding very long (about 300 microns long, 5 microns wide), homogeneous monolayer graphene ribbons. These ribbons fully occupy unusually large terraces on the step bunched SiC surface, as shown by AFM, optical microscopy and SEM. Raman spectrometry indicates that the thermal stress has been partially relaxed by wrinkles formation, visible in AFM images. In addition, we show that despite the low optical absorption of graphene, optical differential transmission can be successfully used to prove the monolayer character of the ribbons.

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• New Synthesis Method for the Growth of Epitaxial Graphene
• High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy
• Graphene formed on SiC under various environments: Comparison of Si-face and C-face
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• Formation of Graphene on SiC(000-1) Surfaces in Disilane and Neon Environments
• An influence of parallel electric field on the dispersion relation of graphene - a new route to Dirac logics
• Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices