101 citations · 241 across the 6 of their papers we have counts for
6 papers
Raman spectrum and optical extinction of graphene buffer layers on the Si-face of 6H-SiC
A. Tiberj, J. R. Huntzinger, N. Camara +2
The buffer layer has been analysed by combined micro-Raman and micro-transmission experiments. The epitaxial graphene growth on the (0001) Si face of 6H-SiC substrates was tuned to…
Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
B. Jouault, N. Camara, B. Jabakhanji +5
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated…
Investigation of Long Monolayer Graphene Ribbons grown on Graphite Capped 6H-SiC (000-1)
N. Camara, G. Rius, J-R. Huntzinger +5
We present an investigation of large, isolated, graphene ribbons grown on the C-face of on-axis semi-insulating 6H-SiC wafers. Using a graphite cap to cover the SiC sample, we modi…
Early stage formation of graphene on the C-face of 6H-SiC
N. Camara, G. Rius, J. -R. Huntzinger +5
An investigation of the early stage formation of graphene on the C-face of 6H-SiC is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is…
Selective epitaxial growth of graphene on SiC
N. Camara, G. Rius, J. -R. Huntzinger +4
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a…
Strain effect in silicon-on-insulator materials: Investigation with optical phonons
J. Camassel, L. A. Falkovsky, N. Planes
We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO interfaces in co…