59 citations · 83 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2011★ 59 cited
Interplay between interferences and electron-electron interactions in epitaxial graphene
B. Jouault, B. Jabakhanji, N. Camara +3
We separate localization and interaction effects in epitaxial graphene devices grown on the C-face of a 4H-SiC substrate by analyzing the low temperature conductivities. Weak local…
cond-mat.mes-hall2010★ 24 cited
Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
N. Camara, B. Jouault, A. Caboni +7
Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have b…