Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices

Abstract

Using high temperature annealing conditions with a graphite cap covering the C-face of an 8deg off-axis 4H-SiC sample, large and homogeneous single epitaxial graphene layers have been grown. Raman spectroscopy shows evidence of the almost free-standing character of these monolayer graphene sheets, which was confirmed by magneto-transport measurements. We find a moderate p-type doping, high carrier mobility and half integer Quantum Hall effect typical of high quality graphene samples. This opens the way to a fully compatible integration of graphene with SiC devices on the wafers that constitute the standard in today's SiC industry.

11 pages, 4 figures , Submitted in APL

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Cited by in corpus (7)

• Interplay between interferences and electron-electron interactions in epitaxial graphene
• Graphene formed on SiC under various environments: Comparison of Si-face and C-face
• Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
• Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC
• Single-layer metallicity and interface magnetism of epitaxial graphene on SiC(000$\bar{1}$)
• Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
• Formation of Graphene atop a Si adlayer on the C-face of SiC