Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
arXiv:1501.04872 · doi:10.1016/j.susc.2013.06.012
Abstract
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+ 6H-SiC a-plane non-polar surface. The twisted graphene is determined to have a rotation angle of 5.4° between the top two layers, by comparing moiré patterns from stick and ball models of bilayer graphene to experimentally obtained images. Furthermore, the experimental moiré pattern shows dynamic behavior, continuously shuffling between two stable surface arrangements one bond length apart. The moiré pattern shifts by more than 1 nm, making it easy to observe with STM. Explanation of this dynamic behavior is attributed to electrostatic interactions between the STM tip and the graphene sample.
20 pages, 5 figures
References in corpus (18)
- Electric Field Effect in Atomically Thin Carbon Films
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Ultrahigh electron mobility in suspended graphene
- Suspended Graphene: a bridge to the Dirac point
- Graphene bilayer with a twist: electronic structure
- Observation of Van Hove singularities in twisted graphene layers
- Tailoring the atomic structure of graphene nanoribbons by STM lithography
- Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
- Electron Transport in Disordered Graphene Nanoribbons
- Directed self-organization of graphene nanoribbons on SiC
- Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2
- Transport Spectroscopy of Symmetry-Broken Insulating States in Bilayer Graphene
- Evidence of structural strain in epitaxial graphene layers on 6H-SiC(0001)
- Morphology of Graphene on SiC(000-1) Surfaces
- Electronic transition from graphite to graphene via controlled movement of the top layer with scanning tunneling microscopy
- Growth of monolayer graphene on 8deg off-axis 4H-SiC (000-1) substrates with application to quantum transport devices
- Evolution in Surface Morphology of Epitaxial Graphene Layers on SiC Induced by Controlled Structural Strain
- Graphene Manipulation on 4H-SiC(0001) Using Scanning Tunneling Microscopy
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