63 citations · 330 across the 15 of their papers we have counts for
15 papers
Boron and nitrogen isotope effects on hexagonal boron nitride properties
E. Janzen, H. Schutte, J. Plo +8
The unique physical, mechanical, chemical, optical, and electronic properties of hexagonal boron nitride (hBN) make it a promising two-dimensional material for electronic, optoelec…
InSe as a case between 3D and 2D layered crystals for excitons
W. Desrat, T. V. Shubina, M. Moret +3
We demonstrate the successive appearance of the exciton, biexciton, and P band of the exciton-exciton scattering with increasing excitation power in the photoluminescence of indium…
Unconventional Reentrant Quantum Hall Effect in a HgTe/CdHgTe Double Quantum Well
M. V. Yakunin, S. S. Krishtopenko, S. M. Podgornykh +7
We report on observation of an unconventional structure of the quantum Hall effect (QHE) in a -type HgTe/CdHgTe double quantum well (DQW) consisting of two HgTe lay…
Perspectives of HgTe Topological Insulators for Quantum Hall Metrology
Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki +16
We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one , corresponding to the topological phase transition and graphen…
Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors
A. Kadykov, F. Teppe, C. Consejo +12
We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transi…
Temperature-induced topological phase transition in HgTe quantum wells
A. M. Kadykov, S. S. Krishtopenko, B. Jouault +9
We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device,…