Terahertz detection of magnetic field-driven topological phase transition in HgTe-based transistors

Abstract

We report on Terahertz detection by inverted band structure HgTe-based Field Effect Transistor up to room temperature. At low temperature, we show that nonlinearities of the transistor channel allows for the observation of the quantum phase transition due to the avoided crossing of zero-mode Landau levels in HgTe 2D topological insulators. These results pave the way towards Terahertz topological Field Effect Transistors.

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Cited by in corpus (8)

• Pressure and temperature driven phase transitions in HgTe quantum wells
• Realistic picture of helical edge states in HgTe quantum wells
• Progress in epitaxial thin-film Na3Bi as a topological electronic material
• Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
• Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
• Disorder-induced phase transitions in double HgTe quantum wells
• Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors
• Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells