Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells
arXiv:2507.00565 · doi:10.1103/1c3q-yps4
Abstract
We present far-infrared magnetospectroscopy measurements of a HgTe quantum well in the inverted band structure regime over the temperature range of 2 to 60 K. The particularly low electron concentration enables us to probe the temperature evolution of all four possible optical transitions originating from zero-mode Landau levels, which are split off from the edges of the electron-like and hole-like bands. By analyzing their resonance energies, we reveal an unambiguous breakdown of the single-particle picture indicating that the explanation of the anticrossing of zero-mode Landau levels in terms of bulk and interface inversion asymmetries is insufficient. Instead, the observed behavior of the optical transitions is well explained by their hybridization driven by electron-electron interaction. We emphasize that our proposed many-particle mechanism is intrinsic to HgTe quantum wells of any crystallographic orientation, including (110) and (111) wells, where bulk and interface inversion asymmetries do not induce the anticrossing of zero-mode Landau levels.
7 pages, 4 figures and Supplemental materials
References in corpus (20)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Nonlocal edge state transport in the quantum spin Hall state
- Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
- The Quantum Spin Hall Effect: Theory and Experiment
- Quantum Spin Hall Effect in Inverted Type II Semiconductors
- Single valley Dirac fermions in zero-gap HgTe quantum wells
- Pressure and temperature driven phase transitions in HgTe quantum wells
- Strain Engineering of the Band Gap of HgTe Quantum Wells using Superlattice Virtual Substrates
- Fine structure of "zero-mode" Landau levels in HgTe/HgCdTe quantum wells
- Two-dimensional topological insulator state in cadmium arsenide thin films
- Temperature-driven transition from a semiconductor to a topological insulator
- Ultrafast Momentum-resolved Hot Electron Dynamics in the Two-dimensional Topological Insulator Bismuthene
- Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
- Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
- Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
- Splitting of Dirac cones in HgTe quantum wells: Effects of crystallographic orientation, interface-, bulk-, and structure-inversion asymmetry
- Disorder-induced phase transitions in double HgTe quantum wells
- Universal transparency and fine band structure near the Dirac point in HgTe quantum wells
- Quasiparticle picture of topological phase transitions induced by interactions