Disorder-induced phase transition in Dirac systems beyond the linear approximation

Abstract

By using the self-consistent Born approximation, we investigate disorder effect induced by the short-range impurities on the band-gap in two-dimensional Dirac systems with the higher order terms in momentum. Starting from the Bernevig-Hughes-Zhang (BHZ) model, we calculate the density-of-states as a function of the disorder strength. We show that due to quadratic corrections to the Dirac Hamiltonian, the band-gap is always affected by the disorder even if the system is gapless in the clean limit. Finally, we explore the disorder effects by using an advanced effective Hamiltonian describing the side maxima of the valence subband in HgTe~quantum wells. We show that the band-gap and disorder-induced topological phase transition in the real structures may differ significantly from those predicted within the BHZ model.

6 pages, 5 fugures and supplemental materials

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Cited by in corpus (10)

• Photoinduced Quantum Anomalous Hall States in the Topological Anderson Insulator
• Engineering topological phases in triple HgTe/CdTe quantum wells
• Weak quantization of non-interacting topological Anderson insulator
• Many-particle effects in optical transitions from zero-mode Landau levels in HgTe quantum wells
• Disorder-induced topological phase transition in HgCdTe crystals
• Disorder-Induced Phase Transitions in Three-Dimensional Chiral Second-Order Topological Insulator
• Disorder-induced phase transitions in double HgTe quantum wells
• Quasiparticle picture of topological phase transitions induced by interactions
• Higher-order topological insulator in cubic semiconductor quantum wells
• Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells