Disorder-induced topological phase transition in HgCdTe crystals
arXiv:2206.14561 · doi:10.1103/PhysRevB.106.115203
Abstract
Using the self-consistent Born approximation, we study a topological phase transition appearing in bulk HgCdTe crystals induced \emph{uncorrelated} disorder due to both randomly distributed impurities and fluctuations in Cd composition. By following the density-of-states evolution, we clearly demonstrate the topological phase transition, which can be understood in terms of the disorder-renormalized mass of Kane fermions. We find that the presence of heavy-hole band in HgCdTe crystals leads to the topological phase transition at much lower disorder strength than it is expected for conventional 3D topological insulators. Our theoretical results can be also applied to other narrow-gap zinc-blende semiconductors such as InAs, InSb and their ternary alloys InAsSb.
arXiv comment8 pages, 4 figures
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Cited by in corpus (7)
- Roles of band gap and Kane electronic dispersion in the THz-frequency nonlinear optical response in HgCdTe
- Magnetophotogalvanic Effects Driven by Terahertz Radiation in CdHgTe Crystals with Kane Fermions
- Disorder-induced phase transitions in double HgTe quantum wells
- Bleaching of the Terahertz Magneto-Photogalvanic Effect in CdHgTe Crystals with Kane Fermions
- Quasiparticle picture of topological phase transitions induced by interactions
- Multiple reentrant topological windows induced by generalized Bernoulli disorder
- Positive Terahertz Photoconductivity in CdHgTe Under Hydrostatic Pressure