Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators

Abstract

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.

Phys. Rev. Lett. accepted version. 21 pages, 9 figures

References in corpus (8)

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• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• The Helical Liquid and the Edge of Quantum Spin Hall Systems
• Kondo effect in the helical edge liquid of the quantum spin Hall state
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Cited by in corpus (36)

• In-plane Zeeman field induced Majorana corner and hinge modes in an $s$-wave superconductor heterostructure
• Excitonic topological order in imbalanced electron-hole bilayers
• Large gap quantum spin Hall insulator, massless Dirac fermions and bilayer graphene analogue in InAs/Ga(In)Sb heterostructures
• Noise-induced backscattering in a quantum-spin-Hall edge
• Helical Liquids in Semiconductors
• Time-Reversal Symmetry-Breaking Nematic Insulators near Quantum Spin Hall Phase Transitions
• Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells
• Robust Helical Edge Transport in Quantum Spin Hall Quantum Wells
• Gapless insulating edges of dirty interacting topological insulators
• Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
• Nontrivial interplay of strong disorder and interactions in quantum spin-Hall insulators doped with dilute magnetic impurities
• First principles feasibility assessment of a topological insulator at the InAs/GaSb interface
• Energy gap tuning and gate-controlled topological phase transition in InAs/In${}_x$Ga${}_{1-x}$Sb composite quantum wells
• Localization-Driven Correlated States of Two Isolated Interacting Helical Edges
• Breakdown of helical edge state topologically protected conductance in time-reversal-breaking excitonic insulators
• Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
• Theory of Glide Symmetry Protected Helical Edge States in WTe${}_2$ Monolayer
• Localized surfaces of three dimensional topological insulators
• Time-resolved measurement of ambipolar edge magnetoplasmon transport in InAs/InGaSb composite quantum wells
• Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
• Characterization of helical Luttinger liquids in microwave stepped-impedance edge resonators
• Band manipulation and spin texture in interacting moiré helical edges
• Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
• Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
• Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers
• Electrical tuning of helical edge states in topological multilayers
• Exciton Condensation in Landau Levels of Quantum Spin Hall Insulators
• Finite-temperature spectroscopy of dirty helical Luttinger liquids
• Enhanced lifetimes of spin chains coupled to chiral edge states
• Charged impurity scattering in two-dimensional topological insulators with Mexican-hat dispersion
• Orbital homology of p and t2g orbitals in models and materials
• Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
• Dissipative Hot-spot Enabled Shock and Bounce Dynamics via Terahertz Quantum Quenches in Helical Edge States
• Microwave Photocurrent from the Helical Edge state of InAs/GaInSb Bilayers
• Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells
• Higher-order topological insulator in cubic semiconductor quantum wells