Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
arXiv:1707.09024 · doi:10.1103/PhysRevB.96.241406
Abstract
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.
arXiv comment20 pages, 7 figures
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Cited by in corpus (20)
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