Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb

Abstract

We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.

20 pages, 7 figures

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• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• The Helical Liquid and the Edge of Quantum Spin Hall Systems
• Giant Nonlocality near the Dirac Point in Graphene
• Kondo effect in the helical edge liquid of the quantum spin Hall state
• Resistance of helical edges formed in a semiconductor heterostructure
• Renormalization group approach for the scattering off a single Rashba impurity in a helical liquid
• Linear magnetoresistance in HgTe quantum wells
• Single-edge transport in an InAs/GaSb quantum spin Hall insulator
• Engineering quantum spin Hall insulators by strained-layer heterostructures
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Cited by in corpus (6)

• Excitonic topological order in imbalanced electron-hole bilayers
• Finite frequency backscattering current noise at a helical edge
• Localized surfaces of three dimensional topological insulators
• Impact of epitaxial strain on the topological-nontopological phase diagram and semimetallic behavior of InAs/GaSb composite quantum wells
• Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
• Finite-temperature spectroscopy of dirty helical Luttinger liquids