Linear magnetoresistance in HgTe quantum wells

Abstract

We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal symmetry and thereby, suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic fields, when the chemical potential moves through the the bulk gap. That magnetoresistance is well described by numerical calculations of the edge states magnetotransport in the presence of nonmagnetic disorder. With magnetic field increasing the resistance, measured both in the local and nonlocal configurations first sharply decreases and then increases again in disagreement with the existing theories.

5 pages, 4 figures

References in corpus (9)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
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Cited by in corpus (11)

• Magnetoresistance in two-component systems
• Persistence of two-dimensional topological insulator state in wide HgTe quantum well
• Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well
• Temperature-driven transition from a semiconductor to a topological insulator
• Mesoscopic transport in two-dimensional topological insulators
• Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements
• Topological insulators based on HgTe
• Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
• Two-dimensional topological insulator state in double HgTe quantum well
• Aharonov Bohm effect in 2D topological insulator
• Tunable spin-polarized edge transport in inverted quantum-well junctions