Linear magnetoresistance in HgTe quantum wells
arXiv:1302.6754 · doi:10.1103/PhysRevB.87.081311
Abstract
We report magnetotransport measurements in a HgTe quantum well with an inverted band structure, which is expected to be a two-dimensional (2D) topological insulator. A small magnetic field perpendicular the 2D layer breaks the time reversal symmetry and thereby, suppresses the edge state transport. A linear magnetoresistance is observed in low magnetic fields, when the chemical potential moves through the the bulk gap. That magnetoresistance is well described by numerical calculations of the edge states magnetotransport in the presence of nonmagnetic disorder. With magnetic field increasing the resistance, measured both in the local and nonlocal configurations first sharply decreases and then increases again in disagreement with the existing theories.
arXiv comment5 pages, 4 figures
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- Linear magnetoresistance in compensated graphene bilayer
- Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry
- Temperature-driven transition from a semiconductor to a topological insulator
- Mesoscopic transport in two-dimensional topological insulators
- Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS
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- Probing topological transitions in HgTe/CdTe quantum wells by magneto-optical measurements
- Counterflows in viscous electron-hole fluid
- Topological insulators based on HgTe
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- Interplay of chiral and helical states in a Quantum Spin Hall Insulator lateral junction
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- Aharonov Bohm effect in 2D topological insulator
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- Tunable spin-polarized edge transport in inverted quantum-well junctions
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- The Future of the Correlated Electron Problem
- Magnetotransport in a 2D Hybrid Band System: Dirac and Heavy Hole Interplay