Topological insulators based on HgTe
arXiv:2012.13738 · doi:10.3367/UFNe.2019.10.038669
Abstract
The most interesting experimental results obtained in studies of 2D and 3D topological insulators (TIs) based on HgTe quantum wells and films are reviewed. In the case of 2D TIs, these include the observation of nonlocal ballistic and diffusion transport, the magnetic breakdown of 2D TIs, and an anomalous temperature dependence of edge-channel resistance. In 3D TIs, a record-setting high mobility of surface two-dimensional Dirac fermions (DFs) has been attained. This enabled determining all the main TI parameters (the bulk gap and the density of DFs on both of its surfaces) and provided information on the phase of the Shubnikov - de Haas oscillations of DFs, which indicates the rigid topological coupling between the fermion spin and momentum. Prospects for further research are discussed in the conclusion.
18 pages, 24 figures
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Cited by in corpus (11)
- General relativity effects in precision spin experimental tests of fundamental symmetries
- Conductivity of two-dimensional narrow gap semiconductors subjected to strong Coulomb disorder
- Energy spectrum of semimetallic HgTe quantum wells
- Engineering topological phases in triple HgTe/CdTe quantum wells
- Conductivity of two-dimensional small gap semiconductors and topological insulators in strong Coulomb disorder
- Splitting of Dirac cones in HgTe quantum wells: Effects of crystallographic orientation, interface-, bulk-, and structure-inversion asymmetry
- Interaction-controlled transport in a two-dimensional massless-massive Dirac system: Transition from degenerate to nondegenerate regimes
- Thermoelectric transport in a three-dimensional HgTe topological insulator
- Tunable Topological Phases in Quantum Kirigamis
- Magnetotransport in a 2D Hybrid Band System: Dirac and Heavy Hole Interplay
- Semiclassical scattering by edge imperfections in topological insulators under magnetic field