Shot noise of the edge transport in the inverted band HgTe quantum wells

Abstract

We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.

added Ref, minor corrections, as published

References in corpus (6)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Nonlocal edge state transport in the quantum spin Hall state
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Shot Noise in Graphene
• Conductivity of a generic helical liquid

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