Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well

Abstract

The microwave photoresistance of a two-dimensional topological insulator in a HgTe quantum well with an inverted spectrum has been experimentally studied under irradiation at frequencies of 110-169 GHz. Two mechanisms of formation of this photoresistance have been revealed. The first mechanism is due to transitions between the dispersion branches of edge current states, whereas the second mechanism is caused by the action of radiation on the bulk of the quantum well.

4 pages, 4 figures

References in corpus (6)

• Nonlocal edge state transport in the quantum spin Hall state
• The Quantum Spin Hall Effect: Theory and Experiment
• Conductivity of a generic helical liquid
• Persistence of two-dimensional topological insulator state in wide HgTe quantum well
• Mesoscopic transport in two-dimensional topological insulators
• Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well