Microwave absorption in a 2D topological insulators with a developed network of edge states

Abstract

The 2D HgTe quantum well is analyzed based on the assumption that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps. The borders between ordinary and topological insulator phases form a network of the edge states covering the overall sample. The optical transitions within the edge states yield the 2D absorption. The qualitative consideration is based on the model of optical intraedge transitions in curved edge states together with the percolation arguments.

5 pages, 4 figures

References in corpus (7)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Topological Anderson Insulator
• Vorticity induced negative nonlocal resistance in viscous two-dimensional electron system
• Percolating States in the Topological Anderson Insulator
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• Edge absorption and pure spin current in 2D topological insulator in the Volkov-Pankratov model

Cited by in corpus (3)

• Transport through the network of topological channels in HgTe based quantum well
• Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of $p$- and $n$-domains
• Microwave Photoresistance of a Two-Dimensional Topological Insulator in a HgTe Quantum Well