Edge absorption and pure spin current in 2D topological insulator in the Volkov-Pankratov model

Abstract

The light absorption due to the transitions between the edge and two-dimensional (2D) states of a 2D topological insulator (TI) is considered in the Volkov-Pankratov model. It is shown that the transitions are allowed only for the in-plane electric field orthogonal to the edge of the TI. It is found that the absorption is accompanied by the pure spin photocurrent along the TI edge. The possibility of the spin current measurement using polarized luminescence from 2D TI quantum dots is discussed.

arXiv comment5 pages, 5 figures

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Cited by in corpus (3)

• Microwave absorption in a 2D topological insulators with a developed network of edge states
• Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of $p$- and $n$-domains
• Universal transparency and fine band structure near the Dirac point in HgTe quantum wells