Edge capacitance of a 2D topological insulator

Abstract

We study capacitance of the 2D topological insulator (TI) edge states. The total capacitance is combined as a serial circuite of 3 capacitors presenting geometrical $C_G$, quantum $C_Q$ and correlation $C_{corr}$ contributions to the electron energy. If the Coulomb interaction is weak, they obey an inequality $C_G<C_Q<C_{corr}$. Quantities $C_G$ and $C_Q$ are found in the case of a round TI dot. The quantum capacitance at the finite temperature is determined taking into account the edge states quantization with and without the magnetic field. We have concluded that, in the accepted approximations, $C_{corr}=0$.

4 pages,1 Figure

References in corpus (4)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• The Quantum Spin Hall Effect: Theory and Experiment
• Finite size effects of helical edge states in HgTe/CdTe quantum wells
• Linearity of the edge states energy spectrum in the 2D topological insulator

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• Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of $p$- and $n$-domains
• Edge absorption and pure spin current in 2D topological insulator in the Volkov-Pankratov model
• Exact solution for many-body Hamiltonian of interacting particles with linear spectrum