Living on the edge: Topology, electrostatics and disorder
arXiv:1911.09363 · doi:10.1103/PhysRevResearch.2.013171
Abstract
We address the co-existence of massless and massive topological edge states at the interface between two materials with different topological phases. We modify the well known Bernevig-Hughes-Zhang model to introduce a smooth function describing the band inversion and the band bending due to electrostatic effects between the bulk of the quantum well and the vacuum. Within this minimal model we identify distinct parameter sets that can lead to the co-existence of the two types of edge states, and that determine their number and characteristics. We propose several experimental setups that could demonstrate their presence in two-dimensional topological systems, as well as ways to regulate or tune the contribution of the massive edge states to the conductance of associated electronic devices. Our results suggest that such states may also be present in novel two-dimensional Van der Waals topological materials.
arXiv comment12 pages, 9 figures
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- Volkov-Pankratov states in topological graphene nanoribbons
- Dirac quantum well engineering on the surface of topological insulator
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