Robust Helical Edge Transport in Quantum Spin Hall Quantum Wells

Abstract

We show that burying of the Dirac point in semiconductor-based quantum-spin-Hall systems can generate unexpected robustness of edge states to magnetic fields. A detailed $\mathbf{k}\cdot \mathbf{p}$ band-structure analysis reveals that InAs/GaSb and HgTe/CdTe quantum wells exhibit such buried Dirac points. By simulating transport in a disordered system described within an effective model, we further demonstrate that buried Dirac points yield nearly quantized edge conduction out to large magnetic fields, consistent with recent experiments.

11 pages, 6 figures

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• Characterization of helical states in semiconductor quantum wells using quantum information quantities
• Electrical tuning of helical edge states in topological multilayers
• Proposal for a scalable charging-energy-protected topological qubit in a quantum spin Hall system
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• Hybrid kernel polynomial method
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