Bias-Voltage-Induced Topological Phase Transition in Finite Size Quantum Spin Hall Systems in the Presence of a Transverse Electric Field

Abstract

Using the tight-binding BHZ model and Landauer-Büttiker formalism, the topological invariant of the finite width of ribbons of HgTe/CdTe quantum well is studied in the absence and presence of an external transverse electric field. It will be recognized that a critical current changes topological invariant of ribbons of quantum well. This topological phase transition, which occurred by adjustment of the bias voltage, depends on the width of the sample and the gate voltage. The profound effects of an external transverse electric field are considered to the separation of spin-up and spin-down band structures, decreasing band gap and tuning the topological phase transition between ordinary and quantum spin Hall regime. These declares the transverse electric field amplifies the quantum spin Hall regime and causes inducing the topological phase transition in ribbons of quantum well. Our finding may instantly clear some practical aspects of the study in the field of spintronic for employment in spin-based devices.

arXiv comment21 pages, 8 figures

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Cited by in corpus (3)

• Engineering topological phases in triple HgTe/CdTe quantum wells
• Topological viewpoint of two-dimensional group III-V and IV-IV compounds in the presence of electric field and spin-orbit coupling by density functional theory and tight-binding model
• Electronic and magnetic properties of honeycomb zigzag nanoribbons in the in-plane transverse electric field using Kane-Mele-Hubbard model