Edge transport in InAs and InAs/GaSb quantum wells

Abstract

We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off confirm the presence of edge conduction in InAs quantum wells. The edge resistivity of 1-2 $k\Omega /\mu \mathrm{m}$ is of the same order of magnitude as edge resistivities measured in the InAs/GaSb double quantum well system. Measurements in tilted magnetic field suggests an anisotropy of the conducting regions at the edges with a larger extent in the plane of the sample than normal to it. Finger gate samples on both material systems shine light on the length dependence of the edge resistance with the intent to unravel the nature of edge conduction in InAs/GaSb coupled quantum wells.

References in corpus (8)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Nonlocal edge state transport in the quantum spin Hall state
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Edge-mode Superconductivity in a Two Dimensional Topological Insulator
• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate
• Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

Cited by in corpus (14)

• Helical Liquids in Semiconductors
• Selective Control of Conductance Modes in Multi-terminal Josephson Junctions
• Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration
• Passivation of Edge States in Etched InAs Sidewalls
• Finite frequency backscattering current noise at a helical edge
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Majorana bound states in topological insulators with hidden Dirac points
• Localization of trivial edge states in InAs/GaSb composite quantum wells
• Robustness of Helical Edge States Under Edge Reconstruction
• Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
• Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
• Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
• Multi-probe analysis to separate edge currents from bulk currents in quantum spin Hall insulators and to analyze their temperature dependence
• Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate