61 citations · 240 across the 8 of their papers we have counts for
8 papers
Phase Slips and Parity Jumps in Quantum Oscillations of Inverted InAs/GaSb Quantum Wells
Matija Karalic, Christopher Mittag, Susanne Mueller +5
We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-split…
Edge transport in InAs and InAs/GaSb quantum wells
Susanne Mueller, Christopher Mittag, Thomas Tschirky +4
We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off…
Scattering mechanisms of highest-mobility InAs/AlGaSb quantum wells
T. Tschirky, S. Mueller, Ch. A. Lehner +4
We study molecular beam epitaxially grown, undoped AlGaSb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highes…
On the impact of strain on the electronic properties of InAs/GaSb quantum well systems
Lars Tiemann, Susanne Mueller, Quansheng Wu +6
Electron-hole hybridization in InAs/GaSb double quantum well structures leads to the formation of a mini band gap. We experimentally and theoretically studied the impact of strain…
Experimental Signatures of the Inverted Phase in InAs/GaSb Coupled Quantum Wells
Matija Karalic, Susanne Mueller, Christopher Mittag +8
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a…
Tunnel barrier design in donor nanostructures defined by hydrogen-resist lithography
Nikola Pascher, Szymon Hennel, Susanne Mueller +1
A four-terminal donor quantum dot (QD) is used to characterize potential barriers between degenerately doped nanoscale contacts. The QD is fabricated by hydrogen-resist lithography…
Non-local transport via edge-states in InAs/GaSb coupled quantum wells
Susanne Mueller, Atindra Nath Pal, Matija Karalic +5
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insul…
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
Atindra Nath Pal, Susanne Mueller, Thomas Ihn +4
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for…