Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

Abstract

We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.

5 pages, 2 figures

References in corpus (3)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Quantum Spin Hall Effect in Inverted Type II Semiconductors

Cited by in corpus (5)

• Scattering mechanisms of highest-mobility InAs/Al${}_x$Ga${}_{1-x}$Sb quantum wells
• Edge transport in InAs and InAs/GaSb quantum wells
• Passivation of Edge States in Etched InAs Sidewalls
• A quantum Stirling heat engine operating in finite time
• On the impact of strain on the electronic properties of InAs/GaSb quantum well systems