250 citations · 646 across the 7 of their papers we have counts for
7 papers
Edge transport in InAs and InAs/GaSb quantum wells
Susanne Mueller, Christopher Mittag, Thomas Tschirky +4
We investigate low-temperature transport through single InAs quantum wells and broken-gap InAs/GaSb double quantum wells. Non-local measurements in the regime beyond bulk pinch-off…
Non-local transport via edge-states in InAs/GaSb coupled quantum wells
Susanne Mueller, Atindra Nath Pal, Matija Karalic +5
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insul…
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
Atindra Nath Pal, Susanne Mueller, Thomas Ihn +4
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for…
Ultrastrong Coupling in the Near-field of Complementary Split Ring Resonators
Curdin Maissen, Giacomo Scalari, Federico Valmorra +7
The ultrastrong light-matter interaction regime was investigated in metallic and superconducting complementary split ring resonators coupled to the cyclotron transition of two dime…
Edge-mode Superconductivity in a Two Dimensional Topological Insulator
Vlad S. Pribiag, Arjan J. A. Beukman, Fanming Qu +4
Topological superconductivity is an exotic state of matter that supports Majorana zero-modes, which are surface modes in 3D, edge modes in 2D or localized end states in 1D. In the…
Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells
Christophe Charpentier, Stefan Fält, Christian Reichl +6
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk.…
Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime
Fabrizio Nichele, Atindra Nath Pal, Patrick Pietsch +4
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resisti…