16 citations · 28 across the 5 of their papers we have counts for
5 papers
Sensing Remote Bulk Defects Through Resistance Noise in a Large Area Graphene Field Effect Transistor
Shubhadip Moulick, Rafiqul Alam, Atindra Nath Pal
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO substrate is used to f…
High Responsivity Gate Tunable UV-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed Dimensional (2D-0D) Heterostructure
Shubhrasish Mukherjee, Didhiti Bhattacharya, Sumanti Patra +5
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum…
Probing Metal-Molecule Contact at the Atomic Scale via Conductance Jump
Biswajit Pabi, Debayan Mondal, Priya Mahadevan +1
Understanding the formation of metal-molecule contact at the microscopic level is the key towards controlling and manipulating atomic scale devices. Employing two isomers of bipyri…
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
Atindra Nath Pal, Susanne Mueller, Thomas Ihn +4
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for…
1/f noise as a probe for investigating band structure in graphene
Atindra Nath Pal, Subhamoy Ghatak, Vidya Kochat +4
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, t…