activity
20082026
most citedThe Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

867 citations · 1.5k across the 39 of their papers we have counts for

collaborators
Showing 2022Show all

5 papers · 1 filter

cond-mat.str-el2022★ 8 cited

Enhanced coercivity and emergence of spin cluster glass state in 2D ferromagnetic material Fe3GeTe2

Satyabrata Bera, Suman Kalyan Pradhan, Riju Pal +8

Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high are desired for spintronics and memory storage applications. FeGeTe (…

cond-mat.mes-hall2022★ 1 cited

Sensing Remote Bulk Defects Through Resistance Noise in a Large Area Graphene Field Effect Transistor

Shubhadip Moulick, Rafiqul Alam, Atindra Nath Pal

Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO substrate is used to f…

cond-mat.mes-hall2022★ 4 cited

An experimental set up to probe the quantum transport through single atomic/molecular junction at room temperature

Biswajit Pabi, Atindra Nath Pal

Understanding the transport characteristics at the atomic limit is the prerequisite for futuristic nano-electronic applications. Among various experimental procedures, mechanically…

cond-mat.mtrl-sci2022

High performance Broadband Photodetection Based on Graphene -- MoSSe Alloy Engineered Phototransistors

Shubhrasish Mukherjee, Didhiti Bhattacharya, Samit Kumar Ray +1

The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcog…

cond-mat.str-el2022★ 2 cited

Revisiting the magnetic ordering through anisotropic magnetic entropy change in quasi-two-dimensional metallic ferromagnet, FeGeTe

Satyabrata Bera, Suman Kalyan Pradhan, Md Salman Khan +7

We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, FeGeTe through measurements of ma…