867 citations · 1.5k across the 39 of their papers we have counts for
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Spin Reorientation Driven Renormalization of Spin-Phonon Coupling in FeGeTe
Riju Pal, Md. Nur Hasan, Chumki Nayak +9
Quasi-2D van der Waals ferromagnet FeGeTe, featuring the simultaneous presence of high Curie temperature ( K) and a spin-reorientation transition a…
Single-Defect Spectroscopy via Random Telegraph Noise in Graphene-Contacted ReS-hBN Heterostructures
Shubhrasish Mukherjee, Gaurab Samanta, Shubhadip Moulick +5
Defect spectroscopy in two-dimensional (2D) field-effect transistors (FETs) requires device architectures that suppress contact and disorder artifacts while preserving intrinsic ca…
Unconventional Electromechanical Response in Ferrocene Assisted Gold Atomic Chain
Biswajit Pabi, Štěpán Marek, Tal Klein +3
Atomically thin metallic chains serve as pivotal systems for studying quantum transport, with their conductance strongly linked to the orbital picture. Here, we report a non-monoto…
Alloying as a new route to generating interlayer excitons
Suvadip Masanta, Chumki Nayak, Premananda Chatterjee +3
Heterobilayers formed by stacking two-dimensional atomic crystals are particularly promising for low-dimensional semiconductor optics, as they host interlayer excitons, bound state…
Skyrmionic Transport and First Order Phase Transitions in Twisted Bilayer Graphene Quantum Hall Ferromagnet
Vineet Pandey, Prasenjit Ghosh, Riju Pal +6
Large-angle twisted bilayer graphene (TBLG) realizes a multicomponent quantum Hall (QH) platform of spin, valley and layer pseudospins with strong Coulomb interaction-driven symmet…
Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoSSe
Chumki Nayak, Suvadip Masanta, Sukanya Ghosh +4
Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley p…
Resonant transport in a highly conducting single molecular junction via metal-metal covalent bond
Biswajit Pabi, Štepán Marek, Adwitiya Pal +5
Achieving highly transmitting molecular junctions through resonant transport at low bias is key to the next-generation low-power molecular devices. Although, resonant transport in…
Structural regulation of mechanical gating in molecular junctions
Biswajit Pabi, Jakub Šebesta, Richard Korytár +2
In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrod…
Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet FeGeTe
Riju Pal, Buddhadeb Pal, Suchanda Mondal +2
FeGeTe, an itinerant vdW ferromagnet (FM) having Curie temperature (T) close to room temperature ( K), exhibits another transition (T 120 K) whe…
Exciton-Plasmon Coupling Mediated Superior Photoresponse in 2D Hybrid Phototransistors
Shubhrasish Mukherjee, Didhiti Bhattacharya, Samit Kumar Ray +1
The possibility of creating heterostructure of two-dimensional (2D) materials has emerged as a viable route towards realizing novel optoelectronic devices. However, the low light a…
Sensing Remote Bulk Defects Through Resistance Noise in a Large Area Graphene Field Effect Transistor
Shubhadip Moulick, Rafiqul Alam, Atindra Nath Pal
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO substrate is used to f…
An experimental set up to probe the quantum transport through single atomic/molecular junction at room temperature
Biswajit Pabi, Atindra Nath Pal
Understanding the transport characteristics at the atomic limit is the prerequisite for futuristic nano-electronic applications. Among various experimental procedures, mechanically…
Probing Metal-Molecule Contact at the Atomic Scale via Conductance Jump
Biswajit Pabi, Debayan Mondal, Priya Mahadevan +1
Understanding the formation of metal-molecule contact at the microscopic level is the key towards controlling and manipulating atomic scale devices. Employing two isomers of bipyri…
Non-local transport via edge-states in InAs/GaSb coupled quantum wells
Susanne Mueller, Atindra Nath Pal, Matija Karalic +5
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insul…
Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
Atindra Nath Pal, Susanne Mueller, Thomas Ihn +4
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for…
Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
Paritosh Karnatak, Srijit Goswami, Vidya Kochat +2
The interaction between the Fermi sea of conduction electrons and a non-adiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of c…
Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases
Fabrizio Nichele, Atindra Nath Pal, Roland Winkler +4
We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A…
Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells
Christophe Charpentier, Stefan Fält, Christian Reichl +6
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk.…
Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime
Fabrizio Nichele, Atindra Nath Pal, Patrick Pietsch +4
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resisti…
Direct observation of valley-hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations
Atindra Nath Pal, Vidya Kochat, Arindam Ghosh
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a d…
High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy
Vidya Kochat, Atindra Nath Pal, Sneha E. S. +5
We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron mic…
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Subhamoy Ghatak, Atindra Nath Pal, Arindam Ghosh
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliate…
1/f noise as a probe for investigating band structure in graphene
Atindra Nath Pal, Subhamoy Ghatak, Vidya Kochat +4
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, t…
Large low-frequency resistance noise in chemical vapor deposited graphene
Atindra Nath Pal, Ageeth A. Bol, Arindam Ghosh
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO substrates obtained by chemical vapor deposition (CVD) on copper foils. We find…