Large low-frequency resistance noise in chemical vapor deposited graphene

Abstract

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO${}_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1-0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.

arXiv comment4 pages, 4 figures

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Cited by in corpus (7)

• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• 1/f noise in graphene
• Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators
• Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
• Origin of electrical noise near charge neutrality in dual gated graphene device
• Low frequency noise in chemical vapor deposited MoS2
• A nearly relaxation-free opto-electronic memory from ultra-thin graphene-MoS${}_2$ binary hybrids