Ultra-low noise field-effect transistor from multilayer graphene

Abstract

We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.

4 pages, 3 figures

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Cited by in corpus (14)

• Review of the Low-Frequency 1/f Noise in Graphene Devices
• Electrical and Noise Characteristics of Graphene Field-Effect Transistors: Ambient Effects and Noise Sources
• Mobility-dependent Low-frequency Noise in Graphene Field Effect Transistors
• Current crowding mediated large contact noise in graphene field-effect transistors
• High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy
• Large low-frequency resistance noise in chemical vapor deposited graphene
• Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
• Percolative switching in transition metal dichalcogenide field-effect transistors at room temperature
• 1/f noise in graphene
• Tunneling conduction in graphene/(poly)vinyl alcohol composites
• Bulk-impurity induced noise in large-area epitaxial thin films of topological insulators
• Limits on the Bolometric response of Graphene due to flicker noise
• Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
• Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene