Effect of boron nitride defects and charge inhomogeneity on 1/f noise in encapsulated graphene
arXiv:2111.09761 · doi:10.1063/5.0071152
Abstract
Low frequency 1/f noise is investigated in graphene, encapsulated between hexagonal boron nitride (hBN) substrate in dual gated geometry. The overall noise magnitude is smaller as compared to graphene on Si/SiO2 substrate. The noise amplitude in the hole doped region is independent of carrier density while in the electron doped region, a pronounced peak is observed, at Fermi energy, EF ~ 90 meV. The physical mechanism of the anomalous noise peak in the electron doped region is attributed to the impurity states originating from the Carbon atom replacing the Nitrogen site in hBN crystal. Furthermore, the noise study near Dirac point shows characteristic "M-shape", which is found to be strongly correlated with the charge inhomogeneity region near Dirac point.
arXiv commentAccepted in Applied Physics Letters
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Cited by in corpus (4)
- Effect of dilute impurities on short graphene Josephson junctions
- Second spectrum of charge carrier density fluctuations in graphene due to trapping/detrapping processes
- Origin of electrical noise near charge neutrality in dual gated graphene device
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