Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions
arXiv:1711.07800 · doi:10.1016/j.ssc.2017.11.008
Abstract
We report an observation of conductance fuctuations (CFs) in the bipolar regime of quantum hall (QH) plateaus in graphene (p-n-p/n-p-n) devices. The CFs in the bipolar regime are shown to decrease with increasing bias and temperature. At high temperature (above 7 K) the CFs vanishes completely and the flat quantized plateaus are recovered in the bipolar regime. The values of QH plateaus are in theoretical agreement based on full equilibration of chiral channels at the p-n junction. The amplitude of CFs for different filling factors follows a trend predicted by the random matrix theory. Although, there are mismatch in the values of CFs between the experiment and theory but at higher filling factors the experimental values become closer to the theoretical prediction. The suppression of CFs and its dependence has been understood in terms of time dependent disorders present at the p-n junctions.
References in corpus (32)
- The electronic properties of graphene
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Unconventional Integer Quantum Hall effect in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices
- A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride
- Edge States and the Quantized Hall Effect in Graphene
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Four-terminal magneto-transport in graphene p-n junctions created by spatially selective doping
- Fabrication of Graphene p-n-p Junctions with Contactless Top Gates
- Snake Trajectories in Ultraclean Graphene p-n Junctions
- Conductance oscillations induced by ballistic snake states in a graphene heterojunction
- Snake States in Graphene p-n Junctions
- Selective equilibration of spin and valley polarized quantum Hall edge states in graphene
- Electrical Transport in High Quality Graphene pnp Junctions
- Graphene p-n junction Arrays as Quantum-Hall Resistance Standards
- Edge-channel interferometer at the graphene quantum Hall pn junction
- Correlation between resistance fluctuations and temperature dependence of conductivity in graphene
- Disorder Effects in the Quantum Hall Effect of Graphene p-n Junctions
- Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions
- Quantum Hall resistances of multiterminal top-gated graphene device
- Shot noise generated by graphene p-n junctions in the quantum Hall effect regime
- Transconductance fluctuations as a probe for interaction induced quantum Hall states in graphene
- Probing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions
- Ballistic transport of graphene pnp junctions with embedded local gates
- Mixing of Edge States at a Bipolar Graphene Junction
- Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet
- Quantum transport in double-gated graphene devices
- Quantum Interference Noise Near the Dirac Point in Graphene
- Dual top gated graphene transistor in the quantum Hall regime
- Tuning equilibration of quantum Hall edge states in graphene - role of crossed electric and magnetic fields
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