Electrical Transport in High Quality Graphene pnp Junctions

Abstract

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device.

to appear in a special focus issue in New Journal of Physics

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Cited by in corpus (29)

• Electronic properties of mesoscopic graphene structures: charge confinement and control of spin and charge transport
• Tuneable electronic properties in graphene
• Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling
• A ballistic pn junction in suspended graphene with split bottom gates
• Mach-Zehnder interferometry using spin- and valley-polarized quantum Hall edge states in graphene
• Transport in superlattices on single layer graphene
• Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures
• Dirac gap-induced graphene quantum dot in an electrostatic potential
• Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions
• Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
• Probing Charging and Localization in the Quantum Hall Regime by Graphene pnp Junctions
• Selective focusing of electrons and holes in a graphene-based superconducting lens
• Distinct Competing Ordered ν=2 States in Bilayer Graphene
• Electric transport through circular graphene quantum dots: Presence of disorder
• Single Gate P-N Junctions in Graphene-Ferroelectric Devices
• Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene
• Graphene: Kinks, Superlattices, Landau levels, and Magnetotransport
• Piezoconductivity of gated suspended graphene
• Quantum transport in double-gated graphene devices
• Electric field-controlled rippling of graphene
• Transport Measurement of Landau level Gaps in Bilayer Graphene
• Equilibration of Quantum hall edges in symmetry broken bilayer graphene
• Manipulating quantum Hall edge channels in graphene through Scanning Gate Microscopy
• Equilibration of quantum hall edge states and its conductance fluctuations in graphene p-n junctions
• Suspension and Measurement of Graphene and Bi2Se3 Atomic Membranes
• Mode mixing induced by disorder in graphene PNP junction in a magnetic field
• Aperiodic conductivity oscillations in quasi-ballistic graphene heterojunctions
• Graphene $n$-$p$ junctions in the Quantum Hall regime: numerical study of incoherent scattering effects
• Twist Angle-Dependent Bands and Valley Inversion in 2D Materials/hBN Heterostructures