A ballistic pn junction in suspended graphene with split bottom gates

Abstract

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as a function of gate voltage, magnetic field, bias, and temperature exhibit characteristic Fabry-Perot oscillations in the cavities formed by the pn junction and each of the contacts, with transport occurring in the ballistic regime. Our results demonstrate the possibility to achieve a high degree of control on the local electronic properties of ultra-clean suspended graphene layers, a key aspect for the realization of new graphene nanostructures.

10 pages, 4 figures

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Cited by in corpus (53)

• Electron optics with ballistic graphene junctions
• Observation of negative refraction of Dirac fermions in graphene
• Ballistic interferences in suspended graphene
• Snake Trajectories in Ultraclean Graphene p-n Junctions
• Tuning a Circular p-n Junction in Graphene from Quantum Confinement to Optical Guiding
• Scalable Tight-Binding Model for Graphene
• Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling
• Coupled quantum dots in bilayer graphene
• Guiding of Electrons in a Few Mode Ballistic Graphene Channel
• Creating and Steering Highly Directional Electron Beams in Graphene
• Single- and multi-mode Fabry-Pérot interference in suspended graphene
• One-way transport in laser-illuminated bilayer graphene: A Floquet isolator
• Gate tuneable beamsplitter in ballistic graphene
• Edge-channel interferometer at the graphene quantum Hall pn junction
• Fabry-Pérot resonances in a graphene/hBN Moiré superlattice
• Quantum charge pumping in graphene-based devices: When lattice defects do help
• Visualization of phase-coherent electron interference in a ballistic graphene Josephson junction
• A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers
• Contact doping, Klein tunneling, and asymmetry of shot noise in suspended graphene
• Towards superlattices: Lateral bipolar multibarriers in graphene
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• Global strain-induced scalar potential in graphene devices
• Co-existence of classical snake states and Aharanov-Bohm oscillations along graphene p-n junctions
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• Fabrication of ballistic suspended graphene with local-gating
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• Fabry-Pérot interference in 2D low-density Rashba gas
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