activity
20082025
most citedStrong interface-induced spin-orbit coupling in graphene on WS2

447 citations · 1.8k across the 25 of their papers we have counts for

collaborators

25 papers

cond-mat.mes-hall2025

Observation of Cavity-Mediated Nonlinear Landau Fan and Modified Landau Level Degeneracy in Graphene Quantum Transport

Hongxia Xue, Hsun-Chi Chan, Zuzhang Lin +9

Recent studies on cavity-coupled two-dimensional electron gas demonstrate that vacuum-field engineering can tailor electronic transport properties of materials. By achieving ultra-…

cond-mat.mes-hall2024★ 6 cited

Coulomb drag in graphene/hBN/graphene moiré heterostructures

Yueyang Wang, Hongxia Xue, Xiong Wang +3

We report on the observation of Coulomb drag between graphene-hexagonal boron nitride (hBN) moiré heterostructure with a moiré wavelength of 14 nm and an intrinsic graphene w…

cond-mat.mes-hall2023★ 3 cited

Landau-level spectrum and the effect of spin-orbit coupling in monolayer graphene on transition metal dichalcogenides

Qing Rao, Hongxia Xue, Dong-Keun Ki

In graphene on transition metal dichalcogenides, proximity-induced Rashba and spin-valley Zeeman SOCs can coexist that modify graphene's electronic band differently. Here, we show…

physics.app-ph2023★ 3 cited

Scratching lithography, manipulation, and soldering of 2D materials using microneedle probes

Qing Rao, Guoyun Gao, Xinyu Wang +2

We demonstrate a facile technique to scratch, manipulate, and solder exfoliated flakes of layered 2D materials using a microneedle probe attached to the precision xyz manipulators…

cond-mat.mes-hall2023★ 37 cited

Ballistic transport spectroscopy of spin-orbit-coupled bands in monolayer graphene on WSe

Qing Rao, Wun-Hao Kang, Hongxia Xue +7

Van der Waals interactions with transition metal dichalcogenides was shown to induce strong spin-orbit coupling (SOC) in graphene, offering great promises to combine large experime…

cond-mat.mes-hall2018★ 41 cited

A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers

Youngwoo Nam, Dong-Keun Ki, David Soler-Delgado +1

Suspended Bernal-stacked graphene multilayers up to an unexpectedly large thickness exhibit a broken-symmetry ground state, whose origin remains to be understood. Here we show that…

cond-mat.mes-hall2017★ 71 cited

Controlling the topological sector of magnetic solitons in exfoliated CrNbS crystals

L. Wang, N. Chepiga, D. -K. Ki +9

We investigate manifestations of topological order in monoaxial helimagnet CrNbS by performing transport measurements on ultra-thin crystals. Upon sweeping the magnetic…

cond-mat.mes-hall2017★ 84 cited

Electron-hole collision limited transport in charge-neutral bilayer graphene

Youngwoo Nam, Dong-Keun Ki, David Soler-Delgado +1

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of imp…

cond-mat.str-el2016★ 23 cited

Interaction-induced insulating state in thick multilayer graphene

Youngwoo Nam, Dong-Keun Ki, Mikito Koshino +2

Close to charge neutrality, the low-energy properties of high-quality suspended devices based on atomically thin graphene layers are determined by electron-electron interactions. B…

cond-mat.mes-hall2016★ 172 cited

Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides

Zhe Wang, Dong-Keun Ki, Jun Yong Khoo +4

We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates.…

cond-mat.mes-hall2016★ 21 cited

Direct Observation of Long-range field-effect from gate tuning of non-local conductivity

Lin Wang, Ignacio Gutiérrez-Lezama, Céline Barreteau +3

We report the observation of an unexpected, long-range field-effect in WTe devices, leading to large gate-induced changes of the transport properties of crystals much thicker t…

cond-mat.mes-hall2015★ 447 cited

Strong interface-induced spin-orbit coupling in graphene on WS2

Zhe Wang, Dong-Keun Ki, Hua Chen +3

Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in the band structure of gr…

cond-mat.mes-hall2015★ 58 cited

Insulating state in tetralayers reveals an even-odd interaction effect in multilayer graphene

Anya L. Grushina, Dong-Keun Ki, Mikito Koshino +5

The absence of an energy gap separating valence and conduction bands makes the low-energy electronic properties of graphene and its multi-layers sensitive to electron-electron inte…

cond-mat.mes-hall2014★ 34 cited

High-quality multi-terminal suspended graphene devices

Dong-Keun Ki, Alberto F. Morpurgo

We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key asp…

cond-mat.mes-hall2014★ 200 cited

Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices

Nuno J. G. Couto, Davide Costanzo, Stephan Engels +6

We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theo…

cond-mat.mes-hall2013★ 143 cited

Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene

Dong-Keun Ki, Vladimir I. Fal'ko, Dmitry A. Abanin +1

We investigate low-temperature magneto-transport in recently developed, high-quality multi-terminal suspended bilayer graphene devices, enabling the independent measurement of the…

cond-mat.mes-hall2013★ 99 cited

A ballistic pn junction in suspended graphene with split bottom gates

Anya L. Grushina, Dong-Keun Ki, Alberto F. Morpurgo

We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended gra…

cond-mat.mes-hall2013★ 9 cited

Identification of a strong contamination source for graphene in vacuum systems

Christophe Caillier, Dong-Keun Ki, Yuliya Lisunova +3

To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occur…

cond-mat.mes-hall2012★ 32 cited

Crossover from Coulomb blockade to quantum Hall effect in suspended graphene nanoribbons

Dong-Keun Ki, Alberto F. Morpurgo

Suspended graphene nano-ribbons formed during current annealing of suspended graphene flakes have been investigated experimentally. Transport measurements show the opening of a tra…

cond-mat.mes-hall2011★ 28 cited

Ballistic transport of graphene pnp junctions with embedded local gates

Seung-Geol Nam, Dong-Keun Ki, Jong Wan Park +3

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electr…

cond-mat.mes-hall2010★ 88 cited

Thermoelectric Transport of Massive Dirac Fermions in Bilayer Graphene

Seung-Geol Nam, Dong-Keun Ki, Hu-Jong Lee

Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical M…

cond-mat.mes-hall2009★ 25 cited

Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet

Dong-Keun Ki, Seung-Geol Nam, Hu-Jong Lee +1

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibrat…

cond-mat.mes-hall2009★ 9 cited

Observation of chiral quantum-Hall edge states in graphene

Dong-Keun Ki, Sanghyun Jo, Hu-Jong Lee

In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding differen…

cond-mat.mes-hall2009★ 41 cited

Quantum Hall resistances of multiterminal top-gated graphene device

Dong-Keun Ki, Hu-Jong Lee

Four-terminal resistances, both longitudinal and diagonal, of a locally gated graphene device are measured in the quantum-Hall (QH) regime. In sharp distinction from previous two-t…