Observation of chiral quantum-Hall edge states in graphene
arXiv:0905.0746 · doi:10.1063/1.3123265
Abstract
In this study, we determined the chiral direction of the quantum-Hall (QH) edge states in graphene by adopting simple two-terminal conductance measurements while grounding different edge positions of the sample. The edge state with a smaller filling factor is found to more strongly interact with the electric contacts. This simple method can be conveniently used to investigate the chirality of the QH edge state with zero filling factor in graphene, which is important to understand the symmetry breaking sequence in high magnetic fields (25 T).
3 pages, 3 figures. Appeared in APL
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- The zero-energy state in graphene in a high magnetic field
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- Inelastic scattering in a monolayer graphene sheet; a weak-localization study
- Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
- Conformal Invariance and Shape-Dependent Conductance of Graphene Samples
- Charge and Spin Transport at the Quantum Hall Edge of Graphene