Fabrication of ballistic suspended graphene with local-gating
arXiv:1409.4751 · doi:10.1016/j.carbon.2014.07.088
Abstract
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the basic building block, the p-n junction in detail, where a striking oscillating pattern was observed, which can be traced back to Fabry-Perot oscillations that are localized in the electronic cavities formed by the local gates. Finally we show some examples how the method can be extended to incorporate multi-terminal junctions or shaped graphene. The structures discussed here enable the access to electron-optics experiments in ballistic graphene.
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- A Two-dimensional Dirac fermion microscope
- Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications
- Guiding of Electrons in a Few Mode Ballistic Graphene Channel
- Gate tuneable beamsplitter in ballistic graphene
- In-situ strain tuning in hBN-encapsulated graphene electronic devices
- Mobility enhancement in graphene by in situ reduction of random strain fluctuations
- Microwave Photodetection in an Ultraclean Suspended Bilayer Graphene pn Junction
- Band gap and broken chirality in single-layer and bilayer graphene
- A corner reflector of graphene Dirac fermions as a phonon-scattering sensor
- Synthesizing Coulombic superconductivity in van der Waals bilayers
- Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
- The Josephson effect in Fibonacci superconductors