615 citations · 2.6k across the 39 of their papers we have counts for
39 papers
A hole spin resilient to dipole-induced thermal effects
V. Champain, G. Boschetto, H. Niebojewski +12
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubi…
From nonreciprocal to charge-4e supercurrents in Ge-based Josephson devices with tunable harmonic content
Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz +10
Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson d…
RF simulation platform of qubit control using FDSOI technology for quantum computing
H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada +6
In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line charac…
Strong coupling between a photon and a hole spin in silicon
Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel +11
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting mic…
Tunable hole spin-photon interaction based on g-matrix modulation
V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann +3
We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the st…
A single hole spin with enhanced coherence in natural silicon
N. Piot, B. Brun, V. Schmitt +14
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric…
Spin-valley coupling anisotropy and noise in CMOS quantum dots
Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt +16
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is…
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for qua…
Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators
Cécile Xinqing Yu, Simon Zihlmann, Gonzalo Troncoso Fernández-Bada +4
We characterize niobium nitride (NbN) coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films gr…
Charge detection in an array of CMOS quantum dots
Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand +15
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays…
All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology
Léo Bourdet, Louis Hutin, Benoit Bertrand +14
We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
Towards scalable silicon quantum computing
M. Vinet, L. Hutin, B. Bertrand +20
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a…
All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology
L. Hutin, L. Bourdet, B. Bertrand +14
We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMO…
Control of single spin in CMOS devices and its application for quantum bits
R. Maurand, D. Kotekar-Patil, A. Corna +9
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at ver…
SOI technology for quantum information processing
S. De Franceschi, L. Hutin, R. Maurand +9
We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an…
Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization
H. Bohuslavskyi, S. Barraud, V. Barral +14
Extensive electrical characterization of ring oscillators (ROs) made in high- metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of…
Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
A. Crippa, R. Ezzouch, A. Aprá +10
Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal devi…
Germanium quantum well Josephson field effect transistors and interferometers
Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz +8
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realiza…
Gate-Based High Fidelity Spin Read-out in a CMOS Device
Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion +13
The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a h…
Ballistic one-dimensional holes with strong g-factor anisotropy in germanium
R. Mizokuchi, R. Maurand, F. Vigneau +2
We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observ…
Electrical spin driving by -matrix modulation in spin-orbit qubits
Alessandro Crippa, Romain Maurand, Léo Bourdet +11
In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opport…
Giant valley-isospin conductance oscillations in ballistic graphene
Clevin Handschin, Péter Makk, Peter Rickhaus +6
At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the…
Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
Andrea Corna, Léo Bourdet, Romain Maurand +11
The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A n…