activity
20122021
most citedSnake Trajectories in Ultraclean Graphene p-n Junctions

117 citations · 428 across the 14 of their papers we have counts for

collaborators

19 papers

cond-mat.mes-hall2021

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt +16

One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is…

cond-mat.mes-hall2021

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12

Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for qua…

cond-mat.mes-hall202049 cited

Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators

Cécile Xinqing Yu, Simon Zihlmann, Gonzalo Troncoso Fernández-Bada +4

We characterize niobium nitride (NbN) coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films gr…

cond-mat.mes-hall202056 cited

Charge detection in an array of CMOS quantum dots

Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand +15

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays…

cond-mat.mes-hall201919 cited

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Léo Bourdet, Louis Hutin, Benoit Bertrand +14

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field…

cond-mat.mes-hall20194 cited

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin, B. Bertrand, E. Chanrion +20

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…