Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
arXiv:2012.15588 · doi:10.1103/PhysRevApplied.16.034031
Abstract
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation.
References in corpus (31)
- Quantum Computation with Quantum Dots
- Introduction to Quantum Noise, Measurement and Amplification
- An addressable quantum dot qubit with fault-tolerant control fidelity
- A Two Qubit Logic Gate in Silicon
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- Decoherence in a superconducting quantum bit circuit
- A CMOS silicon spin qubit
- Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
- Fast two-qubit logic with holes in germanium
- Ge hole spin qubit
- Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
- Qubit-oscillator dynamics in the dispersive regime: analytical theory beyond rotating-wave approximation
- A single-hole spin qubit
- A high-sensitivity gate-based charge sensor in silicon
- Rapid high-fidelity gate-based spin read-out in silicon
- Gate-based single-shot readout of spins in silicon
- Electrical spin driving by -matrix modulation in spin-orbit qubits
- Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
- Observation of quantum capacitance in the Cooper-pair transistor
- Single-qubit lasing and cooling at the Rabi frequency
- Direct Observation of Josephson Capacitance
- Quantum and Tunnelling Capacitance in Charge and Spin Qubits
- High Resolution Valley Spectroscopy of Si Quantum Dots
- Mesoscopic admittance of a double quantum dot
- Radio-frequency capacitive gate-based sensing
- A Radio Frequency Charge Parity Meter
- Spin relaxation benchmarks and individual qubit addressability for holes in quantum dots
- Dissipation in circuit quantum electrodynamics: lasing and cooling of a low-frequency oscillator
- Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor
- From adiabatic to dispersive readout of quantum circuits
- Dispersive readout: Universal theory beyond the rotating-wave approximation
Cited by in corpus (14)
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- Recent advances in hole-spin qubits
- Strong coupling between a microwave photon and a singlet-triplet qubit
- Electrical operation of planar Ge hole spin qubits in an in-plane magnetic field
- Two-body Wigner molecularization in asymmetric quantum dot spin qubits
- Electrical operation of hole spin qubits in planar MOS silicon quantum dots
- Coupling of hole double quantum dot in planar germanium to a microwave cavity
- Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
- Gate reflectometry in dense quantum dot arrays
- Gate-based spin readout of hole quantum dots with site-dependent factors
- Dynamical charge susceptibility in nonequilibrium double quantum dots
- Parametric longitudinal coupling of a semiconductor charge qubit and a RF resonator
- Flux-Tunable Hybridization in a Double Quantum Dot Interferometer
- Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases