158 citations · 1.1k across the 32 of their papers we have counts for
32 papers
3D integration of a hybrid quantum dot circuit-QED device for fast gate dispersive charge readout and coherent spin-photon coupling
Sebastien Granel, Frederic Gustavo, Jean-Luc Thomassin +8
Hybrid circuit quantum electrodynamics (cQED) aims at coupling various quantum degrees of freedom, among which are spin and charge degrees of freedom in gate defined quantum dots,…
Andreev-enhanced conductance quantization and gate-tunable induced superconducting gap in germanium
Elyjah Kiyooka, Chotivut Tangchingchai, Gonzalo Troncoso Fernandez-Bada +8
Ge/SiGe quantum well heterostructures confining a high-mobility two-dimensional hole gas (2DHG) have emerged as a compelling platform for hybrid superconductor(S)-semiconductor(Sm)…
A hole spin resilient to dipole-induced thermal effects
V. Champain, G. Boschetto, H. Niebojewski +12
Recent advances in scaling up spin-based quantum processors have revealed unanticipated issues related to thermal effects. Microwave pulses required to manipulate and read the qubi…
Coherence of a hole spin flopping-mode qubit in a circuit quantum electrodynamics environment
Léo Noirot, Cécile X. Yu, José C. Abadillo-Uriel +5
The entanglement of microwave photons and spin qubits in silicon represents a pivotal step forward for quantum information processing utilizing semiconductor quantum dots. Such hyb…
Gatemon qubit on a germanium quantum-well heterostructure
Elyjah Kiyooka, Chotivut Tangchingchai, Leo Noirot +9
Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an alumi…
Optimal operation of hole spin qubits
Marion Bassi, Esteban-Alonso Rodrıguez-Mena, Boris Brun +11
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing…
Unifying Floquet theory of longitudinal and dispersive readout
Alessandro Chessari, Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel +5
We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $…
Gate- and flux-tunable sin(2) Josephson element with proximitized Ge-based junctions
Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz +11
Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature…
From nonreciprocal to charge-4e supercurrents in Ge-based Josephson devices with tunable harmonic content
Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz +10
Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson d…
Strong coupling between a photon and a hole spin in silicon
Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel +11
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting mic…
Tunable hole spin-photon interaction based on g-matrix modulation
V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann +3
We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the st…
A single hole spin with enhanced coherence in natural silicon
N. Piot, B. Brun, V. Schmitt +14
Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric…
Transport measurements on van der Waals heterostructures under pressure
Bálint Fülöp, Albin Márffy, Endre Tóvári +10
The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theore…
Boosting proximity spin orbit coupling in graphene/WSe heterostructures via hydrostatic pressure
Bálint Fülöp, Albin Márffy, Simon Zihlmann +10
Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly…
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for qua…
Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators
Cécile Xinqing Yu, Simon Zihlmann, Gonzalo Troncoso Fernández-Bada +4
We characterize niobium nitride (NbN) coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films gr…
Global strain-induced scalar potential in graphene devices
Lujun Wang, Andreas Baumgartner, Péter Makk +6
By mechanically distorting a crystal lattice it is possible to engineer the electronic and optical properties of a material. In graphene, one of the major effects of such a distort…
Out-of-plane corrugations in graphene based van der Waals heterostructures
Simon Zihlmann, Péter Makk, Mirko K. Rehmann +7
Two dimensional materials are usually envisioned as flat, truly 2D layers. However out-of-plane corrugations are inevitably present in these materials. In this manuscript, we show…
Mobility enhancement in graphene by in situ reduction of random strain fluctuations
Lujun Wang, Péter Makk, Simon Zihlmann +5
Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility o…
In-situ strain tuning in hBN-encapsulated graphene electronic devices
Lujun Wang, Simon Zihlmann, Andreas Baumgartner +5
Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the…
New generation of moiré superlattices in doubly aligned hBN/graphene/hBN heterostructures
Lujun Wang, Simon Zihlmann, Ming-Hao Liu +5
The specific rotational alignment of two-dimensional lattices results in a moiré superlattice with a larger period than the original lattices and allows one to engineer the electro…
GHz nanomechanical resonator in an ultraclean suspended graphene p-n junction
Minkyung Jung, Peter Rickhaus, Simon Zihlmann +3
We demonstrate high-frequency mechanical resonators in ballistic graphene p-n junctions. Fully suspended graphene devices with two bottom gates exhibit ballistic bipolar behavior a…
Non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy
Simon Zihlmann, Péter Makk, Sebastián Castilla +6
We report on non-equilibrium properties of graphene probed by superconducting tunnel spectroscopy. A hexagonal boron nitride (hBN) tunnel barrier in combination with a superconduct…
Wideband and on-chip excitation for dynamical spin injection into graphene
D. I. Indolese, S. Zihlmann, P. Makk +3
Graphene is an ideal material for spin transport as very long spin relaxation times and lengths can be achieved even at room temperature. However, electrical spin injection is chal…