59 citations · 263 across the 12 of their papers we have counts for
12 papers
Valley physics in the two bands model for SiGe heterostructures and spin qubits
Tancredi Salamone, Biel Martinez Diaz, Jing Li +2
We discuss the choice and implementation of inter-valley potentials in the so-called two bands model for the opposite , or valleys of silicon…
Linear-in-momentum spin orbit interactions in planar Ge/GeSi heterostructures and spin qubits
Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel, Gaëtan Veste +4
We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that sym…
Electronic and Thermal Properties of Superlattices by ab-initio Approach: Impact of Van der Waals Gaps on Vertical Lattice Thermal Conductivity
Benoît Sklénard, François Triozon, Chiara Sabbione +4
In the last decade, several works have focused on exploring the material and electrical properties of superlattices (SLs) in particular because of…
Non-reciprocal Pauli Spin Blockade in a Silicon Double Quantum Dot
Theodor Lundberg, David J. Ibberson, Jing Li +12
Spin qubits in gate-defined silicon quantum dots are receiving increased attention thanks to their potential for large-scale quantum computing. Readout of such spin qubits is done…
Dispersively probed microwave spectroscopy of a silicon hole double quantum dot
Rami Ezzouch, Simon Zihlmann, Vincent P. Michal +12
Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for qua…
Gate reflectometry in dense quantum dot arrays
Fabio Ansaloni, Heorhii Bohuslavskyi, Federico Fedele +12
Silicon quantum devices are maturing from academic single- and two-qubit devices to industrially-fabricated dense quantum-dot (QD) arrays, increasing operational complexity and the…
Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
V. N. Ciriano-Tejel, M. A. Fogarty, S. Schaal +8
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the m…
Charge detection in an array of CMOS quantum dots
Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand +15
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays…
Hole-phonon interactions in quantum dots: Effects of phonon confinement and encapsulation materials on spin-orbit qubits
Jing Li, Benjamin Venitucci, Yann-Michel Niquet
Spin-phonon interactions are one of the mechanisms limiting the lifetime of spin qubits made in semiconductor quantum dots. At variance with other mechanisms such as charge noise,…
Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays
L. Hutin, B. Bertrand, E. Chanrion +20
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor…
A Spin Quintet in a Silicon Double Quantum Dot: Spin Blockade and Relaxation
Theodor Lundberg, Jing Li, Louis Hutin +12
Spins in gate-defined silicon quantum dots are promising candidates for implementing large-scale quantum computing. To read the spin state of these qubits, the mechanism that has p…
Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene
Jing Li, Henrique Pereira Coutada Miranda, Yann-Michel Niquet +4
Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calcula…