Charge detection in an array of CMOS quantum dots

Abstract

The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots.

10 pages, 6 figures

References in corpus (5)

• Single-shot read-out of an individual electron spin in a quantum dot
• Single-shot readout of electron spin states in a quantum dot using spin-dependent tunnel rates
• Scalable gate architecture for densely packed semiconductor spin qubits
• Rapid high-fidelity gate-based spin read-out in silicon
• Mesoscopic admittance of a double quantum dot