Fast gate-based readout of silicon quantum dots using Josephson parametric amplification

Abstract

Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $\mu$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed.

Wrong figure reference corrected

References in corpus (37)

• Surface codes: Towards practical large-scale quantum computation
• Single-shot read-out of an individual electron spin in a quantum dot
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Single-shot readout of an electron spin in silicon
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• Quantum feedback control of a superconducting qubit: Persistent Rabi oscillations
• Phase preserving amplification near the quantum limit with a Josephson Ring Modulator
• Silicon CMOS architecture for a spin-based quantum computer
• Observation of quantum jumps in a superconducting artificial atom
• Rapid Single-Shot Measurement of a Singlet-Triplet Qubit
• A Crossbar Network for Silicon Quantum Dot Qubits
• Dispersive magnetometry with a quantum limited SQUID parametric amplifier
• Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
• A high-sensitivity gate-based charge sensor in silicon
• Rapid high-fidelity gate-based spin read-out in silicon
• Gate-based single-shot readout of spins in silicon
• Charge and spin state readout of a double quantum dot coupled to a resonator
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Fast charge sensing of a cavity-coupled double quantum dot using a Josephson parametric amplifier
• Observation of Entanglement Between Itinerant Microwave Photons and a Superconducting Qubit
• Multiplexed dispersive readout of superconducting phase qubits
• Quantum and Tunnelling Capacitance in Charge and Spin Qubits
• Dispersively detected Pauli Spin-Blockade in a Silicon Nanowire Field-Effect Transistor
• Effect of higher-order nonlinearities on amplification and squeezing in Josephson parametric amplifiers
• Radio-frequency capacitive gate-based sensing
• An ultra sensitive radio frequency single electron transistor working up to 4.2 K
• Single-spin qubits in isotopically enriched silicon at low magnetic field
• A Radio Frequency Charge Parity Meter
• Single-shot single-gate RF spin readout in silicon
• Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
• A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
• A logical qubit in a linear array of semiconductor quantum dots
• Quantum Zeno effect in the strong measurement regime of circuit quantum electrodynamics
• Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
• A Silicon Surface Code Architecture Resilient Against Leakage Errors
• Flux-driven Josephson parametric amplifier for sub-GHz frequencies fabricated with side-wall passivated spacer junction technology
• A circuit analysis of an in situ tunable radio-frequency quantum point contact

Cited by in corpus (40)

• Computing with spin qubits at the surface code error threshold
• Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
• Review of performance metrics of spin qubits in gated semiconducting nanostructures
• The 2021 Quantum Materials Roadmap
• Noisy intermediate-scale quantum computers
• Probing quantum devices with radio-frequency reflectometry
• A single hole spin with enhanced coherence in natural silicon
• A near-ideal degenerate parametric amplifier
• Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
• Resource Estimation for Quantum Variational Simulations of the Hubbard Model
• Charge detection in an array of CMOS quantum dots
• Large dispersive interaction between a CMOS double quantum dot and microwave photons
• Floquet-Mode Traveling-Wave Parametric Amplifiers
• Charge noise and overdrive errors in reflectometry-based charge, spin and Majorana qubit readout
• Radio-frequency reflectometry of a quantum dot using an ultra-low-noise SQUID amplifier
• Three-Wave Mixing Quantum-Limited Kinetic Inductance Parametric Amplifier operating at 6 Tesla and near 1 Kelvin
• Looped Pipelines Enabling Effective 3D Qubit Lattices in a Strictly 2D Device
• Nonlinearity and Parametric Amplification of Superconducting Nanowire Resonators in Magnetic Field
• Linear optics and photodetection achieve near-optimal unambiguous coherent state discrimination
• Single-shot readout of multiple donor electron spins with a gate-based sensor
• A quantum interference capacitor based on double-passage Landau-Zener-Stückelberg-Majorana interferometry
• Granular Aluminum Parametric Amplifier for Low-Noise Measurements in Tesla Fields
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Microwave-resonator-detected excited-state spectroscopy of a double quantum dot
• Multi-module microwave assembly for fast read-out and charge noise characterization of silicon quantum dots
• Towards a realistic GaAs-spin qubit device for a classical error-corrected quantum memory
• RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
• Integrated multiplexed microwave readout of silicon quantum dots in a cryogenic CMOS chip
• Gate reflectometry in dense quantum dot arrays
• An elongated quantum dot as a distributed charge sensor
• Selective Single and Double-Mode Quantum Limited Amplifier
• Magnetic-field dependence of a Josephson traveling-wave parametric amplifier and integration into a high-field setup
• Fast and Ultrasensitive Electrometer Operating at the Single-Photon Level
• Electrical readout of spins in the absence of spin blockade
• Photoionization detection of a single Er${}^{3+}$ ion with sub-100-ns time resolution
• A superconductor free of quasiparticles for seconds
• Intrinsic Noise of the Single Electron Box
• Magnetic-Field and Temperature Limits of a Kinetic-Inductance Traveling-Wave Parametric Amplifier
• 4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot
• Designs for a two-dimensional Si quantum dot array with spin qubit addressability