RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot
arXiv:2010.07566 · doi:10.35848/1347-4065/abeac1
Abstract
We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have a top gate and act as RC low-pass filter, we fabricate a new device to reduce the device's top gate area from 400 $\mbox{$μ$m}^2$ to 0.09 $\mbox{$μ$m}^2$. Having a smaller top gate eliminates the cutoff frequency problem preventing the RF signal from reaching QD. We show that we have fabricated a single QD properly, which is essential for RF single-electron transistor technique. We also analyze and improve the impedance matching condition and show that it is possible to perform readout of charge transition at 4.2 K by RF reflectometry, which will get us to fast readout of charge and spin states.
arXiv comment11 pages, 6 figures
References in corpus (25)
- A Two Qubit Logic Gate in Silicon
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- Storing quantum information for 30 seconds in a nanoelectronic device
- Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
- A CMOS silicon spin qubit
- Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
- Silicon CMOS architecture for a spin-based quantum computer
- Fast Single-Charge Sensing with an rf Quantum Point Contact
- A fault-tolerant addressable spin qubit in a natural silicon quantum dot
- Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
- Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
- A high-sensitivity gate-based charge sensor in silicon
- Charge and spin state readout of a double quantum dot coupled to a resonator
- Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
- Radio-frequency detected fast charge sensing in undoped silicon quantum dots
- Electrical control of g-factors in a few-hole silicon nanowire MOSFET
- Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact
- Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
- Measuring the complex admittance of a carbon nanotube double quantum dot
- A Radio Frequency Charge Parity Meter
- Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
- Radio frequency charge sensing in InAs nanowire double quantum dots
- Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
- Detection of charge motion in a non-metallic silicon isolated double quantum dot
- Radio-frequency reflectometry on large gated 2-dimensional systems